t1116p www.vishay.com vishay semiconductors rev. 1.7, 03-jun-16 1 document number: 81192 for technical questions, contact: optochipsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon pin photodiode description t1116p is a pin photodiode wi th blue enhanced sensitivity and a 7.7 mm 2 sensitive area. features ? package type: chip ? package form: single chip ? dimensions (l x w x h in mm): 2.97 x 2.97 x 0.28 ? radiant sensitive area (in mm 2 ): 7.7 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 60 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? blue enhanced photodetectors general information the datasheet is based on vishay optoel ectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. customers are encouraged to perform testing in actual proposed packaged and used conditions. vishay optoelectronics die products are tested us ing vishay optoelectronics base d quality assurance procedures and are manufactured using vishay optoelectronics established pr ocesses. estimates such as th ose described and set forth in this datasheet for semicond uctor die will vary de pending on a number of packaging, hand ling, use, and other factors. therefore sold die may not perform on an equivale nt basis to standard package products. note ? test conditions see table basic characteristics note ? moq: minimum order quantity 21887 a product summary component i ra (a) ? (deg) 0.1 (nm) t1116p 43 60 350 to 1100 ordering information ordering code packaging remarks package form T1116P-SD-F wafer sawn on foil with disco frame moq: 3500 pcs chip absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 25 v junction temperature t j 100 c operating temperature range t amb -40 to +100 c storage temperature range t stg1 -40 to +100 c storage temperature range on foil t stg2 -40 to +50 c
t1116p www.vishay.com vishay semiconductors rev. 1.7, 03-jun-16 2 document number: 81192 for technical questions, contact: optochipsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the measurements are based on samples of die whic h are mounted on a to-header without resin coating basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature fig. 3 - photo current vs. illuminance fig. 4 - diode capacitance vs. reverse voltage basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit breakdown voltage i r = 100 a, e = 0 v (br) -25-v forward voltage i f = 50 ma v f -11.3v reverse dark current v r = 10 v, e = 0 i ro t- 2 5na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d -90-pf v r = 3 v, f = 1 mhz, e = 0 c d -30-pf temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk i k -0.1-%/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra -43-a e e = 1 mw/cm 2 , = 400 nm, v r = 5 v i ro -13-a e v = 100 lx, cie illuminant a, v r = 5 v i ro -7.1-a angle of half sensitivity ? - 60-deg wavelength of peak sensitivity p - 940 - nm range of spectral bandwidth 0.1 - 350 to 1100 - nm noise equivalent power v r = 10 v, = 400 nm nep - 1.1 x 10 -13 -w/ hz rise time v r = 5 v, r l = 500 , = 850 nm t r -40-ns fall time v r = 10 v, r l = 1 k , = 820 nm t f -40-ns 20 40 60 80 1 10 100 1000 100 94 8403 v r = 10 v t amb - ambient temperature (c) i ro - reverse dark current (na) 0.6 0.8 1.0 1.2 1.4 94 8409 v r =5v = 950 nm 100 80 60 40 20 0 i - re lative reverse light current t - ambient temperature (c) amb ra rel 110100 0.1 1 10 100 i - photo current (a) ra e v - illuminance (lx) 1000 20538 v r = 5 v cie illuminant a 0 20 40 60 80 20539 c d - diode capacitance (pf) v r - reverse voltage (v) 0.1 100 110 10 30 50 70 90 100 e = 0 f = 1 mhz
t1116p www.vishay.com vishay semiconductors rev. 1.7, 03-jun-16 3 document number: 81192 for technical questions, contact: optochipsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - relative spectral sensitivity vs. wavelength note ? all chips are checked in accordance with the vishay semiconductor, specification of visual inspection fvov6870. the visual inspection shall be made in accordance with the specification of visual inspection as referenced. the visual inspe ction of chip backside is performed wi th stereo microscope with incident light and 40x to 80x magnification. the quality inspection (final visual inspection) is performed by production. an addition al visual inspection step as special re lease procedure by qm is not installed. handling and storage conditions ? the hermetically sealed shipment lots shall be opened in temperature and moistu re controlled cleanroom environment only. it is mandatory to follow the rules for disposition of ma terial that can be hazardous for humans and environment. ? product must be handled only at esd safe workstations. standard esd precaution s and safe work environments are as defined in mil-hdbk-263. ? singulated die are not to be handled with tweezers. a vacuum wand with non metallic esd pro tected tip shou ld be used. packing chips are fixed on adhesive foil. upon re quest the foils can be mounted on plastic frame or disco frame. for shipment, the wafers are arranged to stacks and hermeti cally sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). use for recycling reliable operator s only. we can help getting in touch with your nearest sales office. by agreement we will ta ke back packing material, if it is sorted. you will have to bear the costs of transport. we will invoice you for any costs incurre d for packing material that is returned unsorted or which we are not obliged to accept. 400 600 800 1000 0 0.2 0.4 0.6 0.8 1.0 20540 - wavelength (nm) s ( ) rel - relative spectral responsivity 500 700 900 1100 mechanical dimensions parameter symbol min. typ. max. unit length of chip edge (x-direction) l x -2.97- mm length of chip ed ge (y-direction) l y -2.97- mm sensitive area a s 2.77 x 2.77 mm 2 die height h - 0.28 - mm bond pad anode a x b - 0.125 x 0.110 - mm 2 additional information frontside metallization, anode aluminum backside metallization, cathode niv-ag dicing sawing die bonding technology epoxy bonding
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